Strain Effects on the Phonon Thermal Properties of Ultra-Scaled Si Nanowires
نویسندگان
چکیده
The impact of uniaxial and hydrostatic stress on the ballistic thermal conductance (jl) and the specific heat (Cv) of [100] and [110] Si nanowires are explored using a Modified Valence Force Field phonon model. An anisotropic behavior of jl and isotropic nature of Cv under strain are predicted for the two wire orientations. Compressive (tensile) strain decreases (increases) Cv. The Cv trend with strain is controlled by the high energy phonon sub-bands. Dominant contribution of the low/mid (low/high) energy bands in [100] ([110]) wire and their variation under strain governs the behavior of jl. VC 2011 American Institute of Physics. [doi:10.1063/1.3630228]
منابع مشابه
Shape and Orientation Effects on the Ballistic Phonon Thermal Properties of Ultra-Scaled Si Nanowires
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